AP5N50BD - 500V N-Channel Enhancement Mode MOSFET
The AP5N50BD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and
AP5N50BD Features
* VDS = 500V ID =5A Only RDS(ON) < 3.0Ω @ VGS=10V （Type：2.4Ω） Application Use Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) times g Package Marking and Ordering Information n Product ID Pack Marking he AP5N50BD TO-252-3L AP5N50BD XXX YYYY gs Absolute Maximum Ratings (TC=
