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IRFZ34N Power MOSFET

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Description

IRFZ34N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Fully Avalanche Rated VDSS=55.
Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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Datasheet Specifications

Part number
IRFZ34N
Manufacturer
ART CHIP
File Size
620.72 KB
Datasheet
IRFZ34N-ARTCHIP.pdf
Description
Power MOSFET

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ Tc=2

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