Part number:
AM1214-300
Manufacturer:
ASI
File Size:
283.52 KB
Description:
Npn silicon rf power transistor.
* Internal Input/Output Matching Network
* Common Base
* PG = 6.5 db at 325 W/1400 MHz
* Omnigold™ Metalization System D IM A B C D E F G H 2xR I L N M M IN IM U M inches / m m P M AXIM U M inches / m m .135 / 3.43 .100 / 2.54 .050 / 1.27 .376 / 9.55 .110 / 2.7
AM1214-300 Datasheet (283.52 KB)
AM1214-300
ASI
283.52 KB
Npn silicon rf power transistor.
📁 Related Datasheet
AM1214-300 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-300
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY L.
AM1214-325 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-325
. . . . . . . .
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABI.
AM1214-100 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-100
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.
AM1214-175 - RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-175
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY L.
AM1214-200 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
(STMicroelectronics)
AM1214-200
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.
AM1214-250 - RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
(ST Microelectronics)
..
AM1214-250
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
TARGET DATA
• REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING.
AM1280 - linear CCD sensor
(OTO Photonics)
AM1280/AM2280 Datasheet
AM1280/AM2280 Datasheet
Description
AM1280/AM2280 spectro-module is built in with the linear CCD type sensor and 8 pin externa.
AM12N50P - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 500-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applica.