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AP01L60T N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP01L60T Description

AP01L60T RoHS-compliant Product Advanced Power Electronics Corp.▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G S D .
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes.

AP01L60T Applications

* G D S TO-92 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 160 100 300 0.83 -55 to 150 -55 to 150

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Datasheet Details

Part number
AP01L60T
Manufacturer
Advanced Power Electronics
File Size
87.37 KB
Datasheet
AP01L60T-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP01L60T-like datasheet