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AP02N60T-H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP02N60T-H-HF Description

AP02N60T-H-HF Halogen-Free Product Advanced Power Electronics Corp.▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes.

AP02N60T-H-HF Applications

* D G TO-92 Top View Absolute Maximum Ratings Symbol VDS VGS ID@TL=25℃ IDM PD@TL=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 700 +30 0.3 1.2 2 3 Units V V A A W mJ ℃ ℃ Total Power Dissipation Single Pulse A

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP02N60T-H-HF-like datasheet