AP09N20J N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP09N20H/J Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics G N-CHANNEL ENHANCEMENT .
S G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resist.

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Datasheet Specifications

Part number: AP09N20J
Manufacturer: Advanced Power Electronics
File Size: 103.75 KB
Datasheet: AP09N20J_AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* at power dissipation levels to approximately 50 watts. The through-hole version (AP09N20J) is available for lowprofile applications. S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source

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AP09N20J N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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