Part number: AP2306GN
Manufacturer: Advanced Power Electronics
File Size: 104.54KB
Download: 📄 Datasheet
Description: N-channel enhancement mode power MOSFET
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-So.
SOT-23
G
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applicati.
Image gallery
TAGS
📁 Related Datasheet
AP2306GN - N-Channel MOSFET
(VBsemi)
AP2306GN
AP2306GN Datasheet
www.VBsemi.com
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 at V.
AP2306GN-HF - N-channel enhancement mode power MOSFET
(Advanced Power Electronics)
AP2306GN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS C.
AP2306GN-HF - N-Channel MOSFET
(VBsemi)
AP2306GN-HF-VB
AP2306GN-HF-VB Datasheet
N-Channel 20 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
.
AP2306GN-HF-3 - N-channel Enhancement-mode Power MOSFET
(Advanced Power Electronics)
Advanced Power Electronics Corp.
AP2306GN-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Small Package Outline Surface Mount .
AP2306AGEN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(Advanced Power Electronics)
AP2306AGEN
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device
S SOT-.
AP2306AGEN-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(Advanced Power Electronics)
AP2306AGEN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device ▼ RoH.
AP2306AGN - N-channel enhancement mode power MOSFET
(Advanced Power Electronics)
AP2306AGN
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package
S D
N-.
AP2306AGN - N-Channel MOSFET
(VBsemi)
AP2306AGN
N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = 10 V 30
0.033 at VGS = 4.5 V
ID (A)a 6..
AP2306AGN-HF - N-channel enhancement mode power MOSFET
(Advanced Power Electronics)
AP2306AGN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS .
AP2306AGN-HF - N-Channel MOSFET
(VBsemi)
AP2306AGN-HF-VB
AP2306AGN-HF-VB Datasheet
N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = 10 V 30
0.
