AP2306GN Datasheet | Advanced Power Electronics Corp

Description SOT-23 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all mercial-industrial applications. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage .. Parameter Rating 20 ± 12 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 5.3 4.3 10 1.38 0.01 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Value Max. 90 Unit ℃/W Data and specifications subject to change without notice Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 20 0.5 - Typ. 0.1 13 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111 Max. Units 30 35 50 90 1 10 ±100 V V/℃ mΩ mΩ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A VGS=4.5V, ID=5.3A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1.0A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 C) o o VDS=VGS, ID=250u A VDS=5V, ID=5.3A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= ± 12V ID=5.3A VDS=10V VGS=4.5V VDS=15V ID=1A RG=2Ω,VGS=10V RD=15Ω VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate...