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AP3R303GMT-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP3R303GMT-HF-3 Description

Advanced Power Electronics Corp.AP3R303GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement SO-8 Compatible with Heatsink Low .
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

AP3R303GMT-HF-3 Applications

* with a foot print that is compatible with the popular SO-8 and offers a backside heat sink and lower package profile. S S D D D D S G PMPAK®5x6 Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TA=25°C ID at TA=70°C IDM PD at TC=25°C PD at TA=25°C EAS TSTG TJ Parameter Drain-Source

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP3R303GMT-HF-3-like datasheet