AP4506GEH Datasheet - Advanced Power Electronics

AP4506GEH N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuou.

AP4506GEH Datasheet (140.53 KB)

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Datasheet Details

Part number:

AP4506GEH

Manufacturer:

Advanced Power Electronics

File Size:

140.53 KB

Description:

N and p-channel enhancement mode power mosfet.

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AP4506GEH AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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