AP4506GEH

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

AP4506GEH General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuou.

AP4506GEH Datasheet (140.53 KB)

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Datasheet Details

Part number:

AP4506GEH

Manufacturer:

Advanced Power Electronics

File Size:

140.53 KB

Description:

N and p-channel enhancement mode power mosfet.
AP4506GEH RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance .

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AP4506GEH AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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AP4506GEH General Description

Datasheet Details

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Description:

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