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AP4951GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4951GM Description

Advanced Power Electronics Corp.AP4951GM RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charg.
D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device d.

AP4951GM Applications

* and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID D1 G2 S1 -60V 96mΩ -3.4A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pu

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Datasheet Details

Part number
AP4951GM
Manufacturer
Advanced Power Electronics
File Size
178.26 KB
Datasheet
AP4951GM-AdvancedPowerElectronics.pdf
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP4951GM-like datasheet