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AP4951GM-HF-3 - Dual P-channel Enhancement-mode Power MOSFETs

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Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP4951GM-HF-3
Manufacturer Advanced Power Electronics
File Size 85.84 KB
Description Dual P-channel Enhancement-mode Power MOSFETs
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Advanced Power Electronics Corp. AP4951GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free BVDSS R DS(ON) ID D1 -60V 96mΩ -3.4A D2 Description G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The AP4951GM-HF-3 is in the popular SO-8 surface-mount package and is well-suited for use in low-voltage DC/DC conversion and general load-switching applications.
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