AP6679BGJB-HF Datasheet, Mosfet, Advanced Power Electronics

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Distributor Advanced Power Electronics Corp AP6679BGJB-HF AP6679BGJB-HF POWER FIELD-EFFECT TRANSISTOR, 63A I(D), 30V, 0.009OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-251 Quest Components 4622 1547 units
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AP6679BGJB-HF

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Advanced Power Electronics

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Description:

P-channel enhancement mode power mosfet. AP6679B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance an

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AP6679BGJB-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics