AP6679GI P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

www.DataSheet4U.com AP6679GI Pb Free Plating Product Advanced Power Electronics Corp.▼ Low Gate Charge ▼ Single Drive Requirement ▼ Lower On-resist.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.

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Datasheet Specifications

Part number: AP6679GI
Manufacturer: Advanced Power Electronics
File Size: 80.73 KB
Datasheet: AP6679GI_AdvancedPowerElectronics.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -30 ±25 -48 -30 300 31.3 0.25 -55 to 150

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AP6679GI P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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