AP6680GM

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

AP6680GM General Description

D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Ga.

AP6680GM Datasheet (105.78 KB)

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Datasheet Details

Part number:

AP6680GM

Manufacturer:

Advanced Power Electronics

File Size:

105.78 KB

Description:

N-channel enhancement mode power mosfet.
AP6680GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ High Vgs Max Rating Voltage ▼ Surface Mount Package D D D D .

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AP6680GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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AP6680GM General Description

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