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AP9402GYT-HF-3 - N-channel Enhancement-mode Power MOSFET

AP9402GYT-HF-3 Description

Advanced Power Electronics Corp.AP9402GYT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Good Thermal Performance D Low O.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

AP9402GYT-HF-3 Applications

* with a small foot print that offers a backside heat sink and a low package profile. Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Cu

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N-channel Enhancement-mode Power MOSFET Advanced Power Electronics
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