AP9406M Datasheet - Advanced Power Electronics

AP9406M, N-Channel MOSFET

AP9406M Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Low On-resistance D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(O.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.

Applications

* and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20

AP9406M-AdvancedPowerElectronics.pdf