APL1001J Datasheet - Advanced Power Technology

APL1001J N-Channel Power MOSFET

G S D SOT-227 S D G S APL1001J 1000V 18.0A 0.60W ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter VDSS ID IDM, lLM VGS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 and Inductive Current Clamped Gate-Source Voltage PD Total Power Dissipation @ TC = 25°C Linear Derating Fa.

APL1001J_AdvancedPowerTechnology.pdf

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Datasheet Details

Part number:

APL1001J

Manufacturer:

Advanced Power Technology

File Size:

77.24 KB

Description:

N-channel power mosfet.

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APL1001J APL1001J N-Channel Power MOSFET Advanced Power Technology

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