APL501J Datasheet - Advanced Power Technology

APL501J N-Channel MOSFET

G S D SOT-227 S D G S APL501J 500V 43.0A 0.12W ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter VDSS ID IDM, lLM VGS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 and Inductive Current Clamped Gate-Source Voltage PD Total Power Dissipation @ TC = 25°C Linear Derating Fact.

APL501J_AdvancedPowerTechnology.pdf