APL1001P Datasheet - Advanced Power Technology

APL1001P N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D P-Pack G S APL1001P 1000V 18.0A 0.60W HERMETIC PACKAGE POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise spe.

APL1001P_AdvancedPowerTechnology.pdf

APL1001P Datasheet Preview — Preview of APL1001P PDF

Datasheet Details

Part number:

APL1001P

Manufacturer:

Advanced Power Technology

File Size:

115.01 KB

Description:

N-channel enhancement mode high voltage power mosfets.

📁 Related Datasheet

APL1001J N-Channel Power MOSFET (Advanced Power Technology)

APL1084 5A Low Dropout Fast Response Positive Adjustable Regulator (Anpec Electronics)

APL1085 3A Low Dropout Fast Response Positive Adjustable Regulator (Anpec Electronics Coropration)

APL1086 1.5A Low Dropout Fast Response Positive Adjustable Regulator (Anpec Electronics Coropration)

APL1087 800mA Low Dropout Fast Response Positive Adjustable Regulator and Fixed (Anpec Electronics Coropration)

APL1087E 800mA Low Dropout Fast Response Positive Adjustable Regulator and Fixed (Anpec Electronics Coropration)

APL1087R 800mA Low Dropout Fast Response Positive Adjustable Regulator (Anpec Electronics Coropration)

APL1088 500mA Low Dropout Linear Regulator (Etc)

TAGS

APL1001P APL1001P N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Advanced Power Technology

APL1001P Distributor