APL1001P Datasheet - Advanced Power Technology

APL1001P N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D P-Pack G S APL1001P 1000V 18.0A 0.60W HERMETIC PACKAGE POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise spe.

APL1001P Datasheet (115.01 KB)

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Datasheet Details

Part number:

APL1001P

Manufacturer:

Advanced Power Technology

File Size:

115.01 KB

Description:

N-channel enhancement mode high voltage power mosfets.

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APL1001P N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Advanced Power Technology

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