APT1001R6BN Datasheet - Advanced Power Technology

APT1001R6BN MOSFET

D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1002R4BN 1000V 6.5A 2.40Ω All Ratings: TC = 25°C unless otherwise specified. APT 1001R6BN APT 1002R4BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 8 32 ±30 240 1.96 1000 6.5 26 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor O.

APT1001R6BN Datasheet (50.32 KB)