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APT1002R4BN Datasheet - Advanced Power Technology

APT1002R4BN MOSFET

D TO-247 G S APT1002RBN ® 1000V 7.0A 2.00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1002R4BN 1000V 6.5A 2.40Ω All Ratings: TC = 25°C unless otherwise specified. APT 1002RBN APT 1002R4BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 7.0 28 ±30 240 1.96 1000 6.5 26 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor .

APT1002R4BN_AdvancedPowerTechnology.pdf

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Datasheet Details

Part number:

APT1002R4BN

Manufacturer:

Advanced Power Technology

File Size:

50.46 KB

Description:

Mosfet.

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APT1002R4BN APT1002R4BN MOSFET Advanced Power Technology