APT1002RCN Datasheet (Advanced Power Technology)

APT1002RCN, MOSFET

D TO-254 G S APT1002RCN 1000V 5.5A 2.00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified.

APT1002RCN UNIT Volts Amps 1000 5.5 22 ±30 150 1.2 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature