APT1002RCN Datasheet - Advanced Power Technology

APT1002RCN MOSFET

D TO-254 G S APT1002RCN 1000V 5.5A 2.00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT1002RCN UNIT Volts Amps 1000 5.5 22 ±30 150 1.2 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature .

APT1002RCN_AdvancedPowerTechnology.pdf

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Datasheet Details

Part number:

APT1002RCN

Manufacturer:

Advanced Power Technology

File Size:

49.51 KB

Description:

Mosfet.

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APT1002RCN APT1002RCN MOSFET Advanced Power Technology