* G4 0/VBUS S4 www.DataSheet4U.com
* OUT1 G1 S1 VBUS 0/VBUS
* Benefits S4 G4 Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - S
APTM10DHM05 Datasheet (323.21 KB)
APTM10DHM05
Advanced Power Technology
323.21 KB
Mosfet power module.
APTM10DHM05
Asymmetrical - Bridge MOSFET Power Module
VBUS Q1 CR3 G1 OUT2 S1 OUT1 CR2 Q4
VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 2.
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