MS1000 Datasheet, Transistors, Advanced Power Technology

MS1000 Features

• Transistors
• 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM COMMON EMITTER CONFIGURATION DE

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Part number:

MS1000

Manufacturer:

Advanced Power Technology

File Size:

117.02kb

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📄 Datasheet

Description:

Rf & microwave transistors. The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provid

MS1000 Application

• Applications www.datasheet4u.com Features
• 30 MHz 28 VOLTS IMD = -30 dB GOLD M

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MS1000

Advanced Power Technology

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