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MS1008

RF & MICROWAVE TRANSISTORS

MS1008 Features

* 30 MHz 50 VOLTS IMD =

* 30 dB POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1008 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes

MS1008 General Description

The MS1008 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter.

MS1008 Datasheet (219.03 KB)

Preview of MS1008 PDF

Datasheet Details

Part number:

MS1008

Manufacturer:

Advanced Power Technology

File Size:

219.03 KB

Description:

Rf & microwave transistors.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1008 www.datasheet4u.com RF & MICROWAVE TRANSISTORS HF.

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MS1008 MICROWAVE TRANSISTORS Advanced Power Technology

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