MS1001
Advanced Power Technology
136.92kb
Rf & microwave transistors. The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide in
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📁 Related Datasheet
MS1000 - RF & MICROWAVE TRANSISTORS
(Advanced Power Technology)
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1000
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .
MS1000 - Single axis analog accelerometer
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MS1000 - Datasheet
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The MS1000 is the best in class capacitive Bulk MEMS accelerometer, specifically designed for iner.
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MS1000L - Datasheet
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The MS1000L product is a cost-effective MEMS capacitive accelerometer based on a bulk micro-machi.
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The new MS1000T is the best in class high temperature MEMS Accelerometer specifically designed fo.
MS1003 - 10 AMP SCHOTTKY BARRIER RECTIFIERS
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MS1003 - RF & MICROWAVE TRANSISTORS
(Advanced Power Technology)
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1003
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RF & MICROWAVE TRANSISTORS VH.
MS1003SH - Quasi-Resonant Power Supply
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1 Absolute Maximum Ratings (at Tc=25℃) 1 (at Tc=25℃) 1-1 Thermal Ratings 1-1
Item Storage temperature Junction temperature Total power dissipation.
MS1004 - 10 AMP SCHOTTKY BARRIER RECTIFIERS
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MS1004 - Schottky Barrier Rectifier
(INCHANGE)
Schottky Barrier Rectifier
FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Low Power Loss/High.
MS1004SH - Quasi-Resonant Power Supply
(Shindengen)
1 Absolute Maximum Ratings (at Tc=25℃) 1 (at Tc=25℃) 1-1 Thermal Ratings 1-1
Item Storage temperature Junction temperature Total power dissipation.
