* OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD
* 30 dB GOLD METALLIZATION COMMON EMITTER POUT = 250 W PEP WITH 14.5 dB GAIN DESCRIPTION: The MS1011 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and V
MS1011
Advanced Power Technology
115.35 KB
Rf and microwave transistors.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1011
www.datasheet4u.com
RF AND MICROWAVE TRANSISTORS .
📁 Related Datasheet
MS10100 10 AMP SCHOTTKY BARRIER RECTIFIER (Microsemi Corporation)
MS1000 RF & MICROWAVE TRANSISTORS (Advanced Power Technology)
MS1000 Single axis analog accelerometer (SAFRAN)
MS1000L Single axis analog accelerometer (SAFRAN)
MS1000T Single axis analog accelerometer (SAFRAN)
MS1001 RF & MICROWAVE TRANSISTORS (Advanced Power Technology)
MS1003 10 AMP SCHOTTKY BARRIER RECTIFIERS (Microsemi Corporation)
MS1003 RF & MICROWAVE TRANSISTORS (Advanced Power Technology)
MS1003SH Quasi-Resonant Power Supply (Shindengen)
MS1004 10 AMP SCHOTTKY BARRIER RECTIFIERS (Microsemi Corporation)
