* Optimized for SSB 30 MHz 50 Volts Common Emitter Gold Metallization POUT = 75 W Min. GP = 14 dB Gain DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communicat
MS1006
Advanced Power Technology
125.77 KB
Rf and microwave transistors.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1006
www.datasheet4u.com
RF AND MICROWAVE TRANSISTORS .
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