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MS1329

RF & MICROWAVE TRANSISTORS

MS1329 Features

* 150 MHz

* 28 VOLTS

* POUT = 60W

* GP = 7.0 dB MINIMUM

* COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118

* 136 MHz and 28 V Class C

MS1329 General Description

The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118

* 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation provide optimum VSWR capability. MS1329 ABSOLUTE MAXIMUM R.

MS1329 Datasheet (183.31 KB)

Preview of MS1329 PDF

Datasheet Details

Part number:

MS1329

Manufacturer:

Advanced Power Technology

File Size:

183.31 KB

Description:

Rf & microwave transistors.

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TAGS

MS1329 MICROWAVE TRANSISTORS Advanced Power Technology

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