* 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization
MS1409
Advanced Power Technology
361.82 KB
Rf & microwave transistor vhf communications.
www.DataSheet4U.com
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1409
RF & MICROWAVE TRANSISTOR VHF.
📁 Related Datasheet
MS1401 RF & MICROWAVE TRANSISTORS (Microsemi)
MS1401 RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS (Advanced Power Technology)
MS1402 RF & MICROWAVE TRANSISTORS (Microsemi)
MS1403 RF & MICROWAVE TRANSISTORS (Microsemi)
MS1404 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS (Advanced Power Technology)
MS14046 Inductors (Vishay)
MS14052 RF Molded Chokes (Gowanda Electronics)
MS1406 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS (Advanced Power Technology)
MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS (Advanced Power Technology)
MS14 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
