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MS1454 Datasheet - Advanced Power Technology

MS1454, RF & MICROWAVE TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STA.
The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in c.
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MS1454-AdvancedPowerTechnology.pdf

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Datasheet Details

Part number:

MS1454

Manufacturer:

Advanced Power Technology

File Size:

275.89 KB

Description:

RF & MICROWAVE TRANSISTORS

Features

* Gold Metallization
* Diffused Emitter Ballasting
* Internal Input Matching
* Designed for Linear Operation
* High Saturated Power Capability
* Common Emitter Configuration
* POUT
* Gain 30 W MIN 7.5 dB
* Efficiency 55

Applications

* ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS Total Power Dissipation IC Collector Current Tj Junction Temperature Tstg Storage Temperature Value 48 25 3.5 88 7.5 +200 -65 to +150 T

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