MS1454 Datasheet (Advanced Power Technology)

MS1454, RF & MICROWAVE TRANSISTORS

The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter

MS1454 Features

* Gold Metallization

* Diffused Emitter Ballasting

* Internal Input Matching

* Designed for Linear Operation

* High Saturated Power Capability

* Common Emitter Configuration

* POUT

* Gain 30 W MIN 7.5 dB

* Efficiency 55