MS1454 RF & MICROWAVE TRANSISTORS

Advanced Power Technology

Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STA.
The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in c.

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Datasheet Specifications

Part number: MS1454
Manufacturer: Advanced Power Technology
File Size: 275.89 KB
Datasheet: MS1454-AdvancedPowerTechnology.pdf
Description: RF & MICROWAVE TRANSISTORS

Features

* Gold Metallization
* Diffused Emitter Ballasting
* Internal Input Matching
* Designed for Linear Operation
* High Saturated Power Capability
* Common Emitter Configuration
* POUT
* Gain 30 W MIN 7.5 dB
* Efficiency 55

Applications

* ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS Total Power Dissipation IC Collector Current Tj Junction Temperature Tstg Storage Temperature Value 48 25 3.5 88 7.5 +200 -65 to +150 T

MS1454 Distributors

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MS1454 MICROWAVE TRANSISTORS Advanced Power Technology

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