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MS1454 Datasheet - Advanced Power Technology

MS1454 RF & MICROWAVE TRANSISTORS

The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter .

MS1454 Features

* Gold Metallization

* Diffused Emitter Ballasting

* Internal Input Matching

* Designed for Linear Operation

* High Saturated Power Capability

* Common Emitter Configuration

* POUT

* Gain 30 W MIN 7.5 dB

* Efficiency 55

MS1454-AdvancedPowerTechnology.pdf

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Datasheet Details

Part number:

MS1454

Manufacturer:

Advanced Power Technology

File Size:

275.89 KB

Description:

Rf & microwave transistors.

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MS1454 MS1454 MICROWAVE TRANSISTORS Advanced Power Technology

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