PT9701 - NPN SILICON RF POWER TRANSISTOR
PT9701 Features
* INCLUDE:
* Gold Metalization
* Emitter Ballasting
* High Gain MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 1.25 A 45 V 14 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +200 °C 12 °C/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO hFE Cob PG ηC IC
