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PT9701 Datasheet - Advanced Semiconductor

PT9701 - NPN SILICON RF POWER TRANSISTOR

PT9701 Features

* INCLUDE:

* Gold Metalization

* Emitter Ballasting

* High Gain MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 1.25 A 45 V 14 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +200 °C 12 °C/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO hFE Cob PG ηC IC

PT9701_AdvancedSemiconductor.pdf

Preview of PT9701 PDF

Datasheet Details

Part number:

PT9701

Manufacturer:

Advanced Semiconductor

File Size:

18.20 KB

Description:

Npn silicon rf power transistor.

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