UHBS30-1 - NPN SILICON RF POWER TRANSISTOR
UHBS30-1 Features
* Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 9.0 A 50 V 30 V 4.0 V 100 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 1.5 OC/W O O DIM A B C D E F G H I J K L MINIMUM inches / mm J K MAXIMUM inches / mm .355 / 9.02 .115 / 2.9
