UHBS30-1

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

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UHBS30-1

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Advanced Semiconductor

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📥 UHBS30-1 Datasheet PDF

Description:

Npn silicon rf power transistor.
UHBS30-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-1 is Designed for PACKAGE STY.
The ASI UHBS30-1 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° C B 2XØ.130 4X .025 R .115 ..

✔ UHBS30-1 Features

Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 9.0 A 50 V 30 V 4.0 V 100 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 1.5

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UHBS30-1 NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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✔ UHBS30-1 Features

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