UHB100SC12E1BC3N SiC Cascode JFET

Qorvo

Description

DATASHEET Silicon Carbide (SiC) Cascode JFET Module - EliteSiC, Half-Bridge Module, 1200 V, 9.4 mohm Rev.D, January 2025 UHB100SC12E1BC3N Descripti.
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce.

📥 Download Datasheet

UHB100SC12E1BC3N Datasheet Preview — Preview of UHB100SC12E1BC3N PDF

Datasheet Specifications

Part number: UHB100SC12E1BC3N
Manufacturer: Qorvo
File Size: 1.57 MB
Datasheet: UHB100SC12E1BC3N-Qorvo.pdf
Description: SiC Cascode JFET

Features

* Marking UHB100SC12E1BC3N w On-resistance: RDS(on) = 9.4mW (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 1000nC w Low body diode voltage: VFSD = 1.4V w Low gate charge: QG = 170nC w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive w Low intrinsic capacitan

Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UHB100SC12E1BC3N Rev. D, January 2025 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2

UHB100SC12E1BC3N Distributors

📁 Related Datasheet

UHB100SC12E1BC3-N UHB10FT UHB20FCT UHBM45 UHBS15-1 UHBS15-2

📌 All Tags

UHB100SC12E1BC3N SiC Cascode JFET Qorvo

Qorvo UHB100SC12E1BC3N-like datasheet