UHB100SC12E1BC3N - SiC Cascode JFET

Name: UHB100SC12E1BC3N
SKU: UHB100SC12E1BC3N-1577161

Qorvo

📥 Download Datasheet

UHB100SC12E1BC3N Datasheet Preview — Preview of UHB100SC12E1BC3N PDF

Datasheet Details

Part number	UHB100SC12E1BC3N
Manufacturer	Qorvo
File Size	1.57 MB
Description	SiC Cascode JFET
Datasheet	UHB100SC12E1BC3N-Qorvo.pdf

UHB100SC12E1BC3N Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

Marking UHB100SC12E1BC3N w On-resistance: RDS(on) = 9.4mW (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 1000nC w Low body diode voltage: VFSD = 1.4V w Low gate charge: QG = 170nC w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Typical.

📁 UHB100SC12E1BC3N Similar Datasheet

UHB100SC12E1BC3-N - 1200V SiC Half-Bridge (UnitedSiC)
UHB10FT - Ultrafast Recovery Rectifier (Vishay Siliconix)
UHB20FCT - Dual Common-Cathode Ultrafast Recovery Rectifier (Vishay Siliconix)
UHBM45 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS15-1 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS15-2 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS30-1 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS30-2 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

Other Datasheets by Qorvo

Published: Apr 29, 2025 |