UHB100SC12E1BC3N - SiC Cascode JFET
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs,
UHB100SC12E1BC3N Features
* Marking UHB100SC12E1BC3N w On-resistance: RDS(on) = 9.4mW (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 1000nC w Low body diode voltage: VFSD = 1.4V w Low gate charge: QG = 170nC w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive w Low intrinsic capacitan
