UHB100SC12E1BC3-N 1200V SiC Half-Bridge

UnitedSiC

Description

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9mΩ - 1200V SiC Half-Bridge Module | UHB100SC12E1BC3-N Datasheet United Silicon Carbide's SiC FET products feature a stacked cascode formed using it.

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Datasheet Specifications

Part number: UHB100SC12E1BC3-N
Manufacturer: UnitedSiC
File Size: 243.85 KB
Datasheet: UHB100SC12E1BC3-N-UnitedSiC.pdf
Description: 1200V SiC Half-Bridge

Features

* Typical on-resistance RDS(on),typ of 9mΩ
* Maximum junction temperature of 175°C
* Excellent reverse recovery
* Low gate charge
* Low COSS

Applications

* EV charging
* PV inverters
* Switch mode power supplies
* Power factor correction modules
* Motor drives
* Induction heating Cascode Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche

UHB100SC12E1BC3-N Distributors

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UHB100SC12E1BC3-N 1200V SiC Half-Bridge UnitedSiC

UnitedSiC UHB100SC12E1BC3-N-like datasheet