UHB100SC12E1BC3-N - 1200V SiC Half-Bridge

UnitedSiC

UHB100SC12E1BC3-N Datasheet Preview — Preview of UHB100SC12E1BC3-N PDF

Datasheet Details

Part number	UHB100SC12E1BC3-N
Manufacturer	UnitedSiC
File Size	243.85 KB
Description	1200V SiC Half-Bridge
Datasheet	UHB100SC12E1BC3-N-UnitedSiC.pdf

UHB100SC12E1BC3-N Product details

Description

9mΩ - 1200V SiC Half-Bridge Module | UHB100SC12E1BC3-N Datasheet United Silicon Carbide's SiC FET products feature a stacked cascode formed using its high-performance G3 Fast SiC JFETs with a optimized MOSFET to produce the only standard gate drive SiC device on the market today.This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.These devices are excellent for switching inductive loads, and any application requiring

Features

Typical on-resistance RDS(on),typ of 9mΩ.
Maximum junction temperature of 175°C.
Excellent reverse recovery.
Low gate charge.
Low COSS.
ESD protected, HBM class 2 Part Number UHB100SC12E1BC3-N Package E1B Marking UHB100SC12E1BC3-N Typical.

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Published: Apr 14, 2025 |