Part number:
UHB100SC12E1BC3-N
Manufacturer:
UnitedSiC
File Size:
243.85 KB
Description:
1200v sic half-bridge.
UHB100SC12E1BC3-N Datasheet (243.85 KB)
* Typical on-resistance RDS(on),typ of 9mΩ
* Maximum junction temperature of 175°C
* Excellent reverse recovery
* Low gate charge
* Low COSS
* ESD protected, HBM class 2 Part Number UHB100SC12E1BC3-N Package E1B Marking UHB100SC12E1BC3-N Typical Applications
* EV char
UHB100SC12E1BC3-N Datasheet (243.85 KB)
UHB100SC12E1BC3-N
UnitedSiC
243.85 KB
1200v sic half-bridge.
📁 Related Datasheet
UHB100SC12E1BC3N SiC Cascode JFET (Qorvo)
UHB10FT Ultrafast Recovery Rectifier (Vishay Siliconix)
UHB20FCT Dual Common-Cathode Ultrafast Recovery Rectifier (Vishay Siliconix)
UHBM45 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS15-1 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS15-2 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS30-1 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS30-2 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS60-1 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
UHBS60-2 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
