UHB100SC12E1BC3-N - 1200V SiC Half-Bridge
UHB100SC12E1BC3-N Features
* Typical on-resistance RDS(on),typ of 9mΩ
* Maximum junction temperature of 175°C
* Excellent reverse recovery
* Low gate charge
* Low COSS
* ESD protected, HBM class 2 Part Number UHB100SC12E1BC3-N Package E1B Marking UHB100SC12E1BC3-N Typical Applications
* EV char
