UHBS30-2 - NPN SILICON RF POWER TRANSISTOR
UHBS30-2 Features
* Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O I J K L 9.0 A 50 V 30 V 50 V 4.0 V 100 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.5 OC/W O O O O DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .355