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AP4800M N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4800M Description

www.DataSheet4U.com AP4800M Advanced Power Electronics Corp.▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement D D D D N-CHANNEL ENHA.
D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance.

AP4800M Applications

* and suited for low voltage applications such as DC/DC converters. S S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 ± 20 9 7 40 2.5 0.02 -55 to 150

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Datasheet Details

Part number
AP4800M
Manufacturer
Advanced Power Electronics
File Size
116.32 KB
Datasheet
AP4800M_AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP4800M-like datasheet