Datasheet4U Logo Datasheet4U.com

BAM120 NPN SILICON RF POWER TRANSISTOR

BAM120 Description

www.DataSheet4U.com BAM120 NPN SILICON RF POWER TRANSISTOR .
The ASI BAM120 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 150 MHz.

BAM120 Features

* ηC = 65 % typ. @ 120 W/150 MHz
* PG = 9.0 dB typ. @ 120 W/150 MHz
* Omnigold™ Metalization System MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG θJC 12 A 60 V 4.0 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.2 °C/W DataSheet4U. com 1 = COLLECTOR 2 = BASE 3 & 4 =

📥 Download Datasheet

Preview of BAM120 PDF

Datasheet Details

Part number
BAM120
Manufacturer
Advanced Semiconductor
File Size
173.17 KB
Datasheet
BAM120_AdvancedSemiconductor.pdf
Description
NPN SILICON RF POWER TRANSISTOR

📁 Related Datasheet

  • BAM20 - 20 WATTS - 27 VOLTS 100-160 MHz (ETC)
  • BAM40 - RF POWER AMP TRANSISTOR (Bharat Electronics)

📌 All Tags

NPN SILICON POWER TRANSISTOR Advanced Semiconductor
Advanced Semiconductor BAM120-like datasheet