1N5818W, 1N5817W - SCHOTTKY DIODES

AiT Semiconductor

Datasheet Details

Part number	1N5818W, 1N5817W
Manufacturer	AiT Semiconductor
File Size	309.37 KB
Description	SCHOTTKY DIODES
Datasheet	1N5817W-AiTSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: 1N5818W, 1N5817W. Please refer to the document for exact specifications by model.

The 1N5817W~1N5819W are available in SOD123FL package.

Metal silicon junction, majority carrier conduction.
Guarding for overvoltage protection.
Low power loss, high efficiency.
High current capability.
low forward voltage drop.
High surge capability.
For use in low voltage, high frequency inverters, free wheeling, and polarity protection.

📁 1N5818W Similar Datasheet

1N5818WS - SCHOTTKY BARRIER RECTIFIERS (Jingdao Microelectronics)
1N5818 - Low drop power Schottky rectifier (STMicroelectronics)
1N5818-1 - 1 Amp Schottky Barrier Rectifiers (Microsemi)
1N5818-G - Schottky Barrier Rectifiers (Comchip)
1N5818G - 1A Schottky Rectifier (Microsemi)
1N5818M - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
1N5818S - 1.0AMP. SCHOTTKY BARRIER RECTIFIERS (YFD)
1N5818SF - SCHOTTKY BARRIER RECTIFIER (JINAN JINGHENG)

Other Datasheets by AiT Semiconductor

Published: May 15, 2024 |