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1N5817W

SCHOTTKY DIODES

1N5817W Features

* Metal silicon junction, majority carrier conduction

* Guarding for overvoltage protection

* Low power loss, high efficiency

* High current capability

* low forward voltage drop

* High surge capability

* For use in low voltage, high frequency inverters, free wheeling, an

1N5817W Datasheet (309.37 KB)

Preview of 1N5817W PDF

Datasheet Details

Part number:

1N5817W

Manufacturer:

AiT Semiconductor

File Size:

309.37 KB

Description:

Schottky diodes.

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1N5817W SCHOTTKY DIODES AiT Semiconductor

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