1N5817S
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1.0amp. schottky barrier rectifiers.
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1N5817 - SCHOTTKY BARRIER RECTIFIERS
(MotorolaInc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 1N5817/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a lar.
1N5817 - Schottky barrier diodes
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
1N5817; 1N5818; 1N5819 Schottky barrier diodes
Product specification Supersedes data of April 1992 .
1N5817 - Low drop power Schottky rectifier
(STMicroelectronics)
1N5817, 1N5818, 1N5819
Low drop power Schottky rectifier
Features
■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast swit.
1N5817 - Schottky Barrier Rectifiers
(Vishay Siliconix)
.vishay.
1N5817, 1N5818, 1N5819
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
DO-41 (DO-204AL)
PRIMARY CHARACTERISTICS
IF.
1N5817 - 1.0A SCHOTTKY BARRIER RECTIFIER
(Diodes)
Pb
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for Transient Protection Low-Power Loss, High Efficienc.
1N5817 - SCHOTTKY RECTIFIER
(International Rectifier)
SCHOTTKY RECTIFIER
Bulletin PD-20646 rev. C 11/04
1N5817
1.0 Amp
Major Ratings and Characteristics
Characteristics
Values Units
IF(AV) Rectangula.
1N5817 - Schottky Barrier Rectifier
(Fairchild Semiconductor)
1N5817 - 1N5819 — Schottky Barrier Rectifier
November 2010
1N5817 - 1N5819
Schottky Barrier Rectifier
Features
• 1.0 ampere operation at TA = 90°C wi.
1N5817 - SCHOTTKY BARRIER RECTIFIERS
(PAN JIT)
1N5817~1N5819
SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volt CURRENT
1 Ampere
FEATURES
• Plastic package has Underwriters Laboratory Flammabilit.
1N5817 - 1.0A SCHOTTKY BARRIER DIODE
(WON-TOP)
®
WON-TOP ELECTRONICS
Features
Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 25A Peak Low Power L.
1N5817 - SCHOTTKY DIODES
(AiT Components)
AiT Components Inc.
.ait-ponents.
1N5817~1N5819
SCHOTTKY DIODES
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
DESCRIPTION
The 1N5817~1N5819 are.