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1N5817UR-1

Silicon Schottky Barrier Diode

1N5817UR-1 Features

* Low Forward Voltage: 450 mV @ IF = 1.0 A

* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/586

* Reverse Breakdown Voltage: 20 V

* Hermetically Sealed Glass, DO-41 (DO-204AL) and MELF (DO-213AB) Description The 1N5817 silicon Schottky diode offers a large

1N5817UR-1 General Description

The 1N5817 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard DO-41 hermetically sealed axial le.

1N5817UR-1 Datasheet (529.89 KB)

Preview of 1N5817UR-1 PDF

Datasheet Details

Part number:

1N5817UR-1

Manufacturer:

VPT

File Size:

529.89 KB

Description:

Silicon schottky barrier diode.

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TAGS

1N5817UR-1 Silicon Schottky Barrier Diode VPT

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