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1N5817UR-1, 1N5817-1 Silicon Schottky Barrier Diode

1N5817UR-1 Description

1N5817-1, 1N5817UR-1 Silicon Schottky Barrier Diode .
The 1N5817 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.

1N5817UR-1 Features

* Low Forward Voltage: 450 mV @ IF = 1.0 A
* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/586
* Reverse Breakdown Voltage: 20 V

1N5817UR-1 Applications

* The 1N5817 is designed to be used in wide variety of applications, such as low voltage, high frequency inverters and reverse polarity protection. Rev. V1 Electrical Specifications: TA = +25°C (unless otherwise specified) Symbol Reverse Leakage Current VRM = 20 V (pk) IR1 µA
* 70 Re

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 1N5817UR-1, 1N5817-1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
1N5817UR-1, 1N5817-1
Manufacturer
VPT
File Size
529.89 KB
Datasheet
1N5817-1-VPT.pdf
Description
Silicon Schottky Barrier Diode
Note
This datasheet PDF includes multiple part numbers: 1N5817UR-1, 1N5817-1.
Please refer to the document for exact specifications by model.

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Silicon Schottky Barrier Diode VPT
VPT 1N5817UR-1-like datasheet