Description
1N5819-1, 1N5819UR-1 Silicon Schottky Barrier Diode .
The 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.
Features
* Low Forward Voltage: 490 mV @ IF = 1.0 A
* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/586
* High Reverse Breakdown Voltage: 45 V
Applications
* The 1N5819 is designed to be used in wide variety of applications, such as low voltage, high frequency inverters and reverse polarity protection. Rev. V1
Electrical Specifications: TA = +25°C (unless otherwise specified)
Symbol
Reverse Leakage Current
Reverse Leakage Current
Reverse Leakage Curr