Datasheet Specifications
- Part number
- 1N5817-1
- Manufacturer
- VPT
- File Size
- 529.89 KB
- Datasheet
- 1N5817-1-VPT.pdf
- Description
- Silicon Schottky Barrier Diode
Description
1N5817-1, 1N5817UR-1 Silicon Schottky Barrier Diode .
Features
* Low Forward Voltage: 450 mV @ IF = 1.0 AApplications
* The 1N5817 is designed to be used in wide variety of applications, such as low voltage, high frequency inverters and reverse polarity protection. Rev. V1 Electrical Specifications: TA = +25°C (unless otherwise specified) Symbol Reverse Leakage Current VRM = 20 V (pk) IR1 µA1N5817-1 Distributors
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