1N5817-G - Schottky Barrier Rectifiers
1N5817-G Features
* -Metal-Semiconductor junction with guard ring. -Epitaxial construction. -Low forward voltage drop. -High current capability. -For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Mechanical data -Case: JEDEC DO-41 molded plastic -Epoxy: UL 94V-0 rate
