AM3415 Datasheet - AiT Semiconductor

AM3415 -20V P-CHANNEL ENHANCEMENT MODE MOSFET

The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate voltage as 1.5V. This device is suitable for use as a load switch or in applications..

AM3415 Features

* -20V/-4.0A, RDS(ON) =45mΩ(typ.)@VGS =-4.5V

* -20V/-4.0A, RDS(ON) =54mΩ(typ.)@VGS =-2.5V

* -20V/-2.0A, RDS(ON) =68mΩ(typ.)@VGS =-1.8V

* -20V/-1.0A, RDS(ON) =92mΩ(typ.)@VGS =-1.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and Maxim

AM3415-AiTSemiconductor.pdf