AM3414 Datasheet - AiT Semiconductor

AM3414 20V N-CHANNEL ENHANCEMENT MODE MOSFET

The AM3414 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate as 1.8V. This device is suitable for use as a load switch or other general applicatio.

AM3414 Features

* 20V/5.0A, RDS(ON) =30mΩ(typ.)@VGS =4.5V

* 30V/4.5A, RDS(ON) =42mΩ(typ.)@VGS =2.5V

* 30V/3.8A, RDS(ON) =50mΩ(typ.)@VGS =1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and Maximum DC current capability

* RoHs Compliant

* Availa

AM3414-AiTSemiconductor.pdf

AM3414 Datasheet Preview — Preview of AM3414 PDF

Datasheet Details

Part number:

AM3414

Manufacturer:

AiT Semiconductor

File Size:

466.92 KB

Description:

20v n-channel enhancement mode mosfet.

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AM3414 AM3414 20V N-CHANNEL ENHANCEMENT MODE MOSFET AiT Semiconductor

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