AM3414 Datasheet (AiT Semiconductor) - 20V N-CHANNEL ENHANCEMENT MODE MOSFET

AM3414, 20V N-CHANNEL ENHANCEMENT MODE MOSFET

The AM3414 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS (ON) low gate charge and operation with gate as 1.8V.

This device is suitable for use as a load switch or other general applicatio

AM3414 Features

* 20V/5.0A, RDS(ON) =30mΩ(typ.)@VGS =4.5V

* 30V/4.5A, RDS(ON) =42mΩ(typ.)@VGS =2.5V

* 30V/3.8A, RDS(ON) =50mΩ(typ.)@VGS =1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and Maximum DC current capability

* RoHs Compliant

* Availa