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AFN4286WS

N-Channel MOSFET

AFN4286WS Features

* 40V/8A,RDS(ON)= 33mΩ@VGS=10V 40V/5A,RDS(ON)= 38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Rectification CCFL Inverter Car Charger POL, IBC - Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Orde

AFN4286WS General Description

AFN4286WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFN4286WS Datasheet (558.96 KB)

Preview of AFN4286WS PDF

Datasheet Details

Part number:

AFN4286WS

Manufacturer:

Alfa-MOS

File Size:

558.96 KB

Description:

N-channel mosfet.

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TAGS

AFN4286WS N-Channel MOSFET Alfa-MOS

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