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AFN8918

N-Channel Enhancement Mode MOSFET

AFN8918 Features

* 40V/4.6A,RDS(ON)=30mΩ@VGS=10V 40V/3.6A,RDS(ON)=54mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2

AFN8918 General Description

AFN8918, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFN8918 Datasheet (687.66 KB)

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Preview of AFN8918 PDF

Datasheet Details

Part number:

AFN8918

Manufacturer:

Alfa-MOS

File Size:

687.66 KB

Description:

N-channel enhancement mode mosfet.

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Stock and price

Distributor
Toshiba America Electronic Components
TLP5754H(TP,E(T
236 In Stock
Qty : 1000 units
Unit Price : $0.8

TAGS

AFN8918 N-Channel Enhancement Mode MOSFET Alfa-MOS

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