AFP1913E, AFP1913E-Alfa Datasheet - Alfa-MOS

AFP1913E P-Channel MOSFET

AFP1913E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFP1913E Features

* z -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage Operation z High-Speed Circuits z Low Battery Voltage Operation z ESD Protection Diode design

* in z SOT-363 package design

AFP1913E-Alfa-MOS.pdf