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AFP1913E, AFP1913E-Alfa P-Channel MOSFET

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Description

Alfa-MOS Technology General .
AFP1913E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFP1913E, AFP1913E-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFP1913E, AFP1913E-Alfa
Manufacturer
Alfa-MOS
File Size
504.80 KB
Datasheet
AFP1913E-Alfa-MOS.pdf
Description
P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFP1913E, AFP1913E-Alfa.
Please refer to the document for exact specifications by model.

Features

* z -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage Operation z High-Speed Circuits z Low Battery Voltage Operation z ESD Protection Diode design
* in z SOT-363 package design

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