Part number:
AFP1913E
Manufacturer:
Alfa-MOS
File Size:
504.80 KB
Description:
P-channel mosfet.
* z -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage Operation z High-Speed Circuits z Low Battery Voltage Operation z ESD Protection Diode design
* in z SOT-363 package design
AFP1913E Datasheet (504.80 KB)
AFP1913E
Alfa-MOS
504.80 KB
P-channel mosfet.
📁 Related Datasheet
AFP1913 - P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP1913, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFP1933 - P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP1933, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFP1013 - P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP1013, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFP1013E - P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFP1023 - P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP1023, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFP1023E - P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.
AFP1033 - P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP1033, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .
AFP1033E - P-Channel MOSFET
(Alfa-MOS)
Alfa-MOS
Technology
General Description
AFP1033, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low .